NMOS

  • n.沟道金氧半导体器件
  • 网络N—Channel Metal-Oxide-Semiconductor; 电晶体; 沟道金属氧化物半导体

NMOSNMOS

NMOS

N—Channel Metal-Oxide-Semiconductor

...为MOS型(或单极型)数字集成电路,属于这一类的有NMOSN—Channel Metal-Oxide-Semiconductor)和CMOS(Compl…

电晶体

电晶体(NMOS)会快速导通而成为低输入阻抗,同样可

沟道金属氧化物半导体

电器电子词汇英语翻译(H-N) ... nitrox reactor 氮化物 氧化物反应器 nmos n 沟道金属氧化物半导体 nmos technology nmos 工艺 ...

N型金氧半导体

计算机与网络英语词汇(N2)|无忧教育 ... NMC Network Management Center 网络管理中心 NMOS N 型金氧半导体 NNTP NNT…

n-通道金氧半导体

电脑英文网络翻译n-网络-名称字符-名称... ... nybble 尼;半拜;四数元组 (NMOS) n-通道金氧半导体 (nm) 末米 ...

通道长度调变效应

Usage Statistics for... ... 3 0.00% 谁发明 linear motion 3 0.00% 通道长度调变效应 nmos ...

负极通道金属氧化物半导体

... Nm 牛顿米 NMOS 负极通道金属氧化物半导体 NOS 牛顿操作系统 ...

增强型N沟道场效应管

《普通高等教育“十一五”... ... 24.2.2 随机存储器( RAM) 14.3.1 增强型N沟道场效应管NMOS) 14.3.2 增强型P沟道场效应 …

1
Through inductor optimization, the VCO has a low phase noise and a wide tuning range with switched capacitor array and NMOS varactor. 通过优化集成电感的设计,同时采用NMOS管和开关电容阵列作为可变电容,使该设计具有较低的相位噪声和较宽的调谐范围。
2
and a PMOS transistor and a NMOS transistor that may be formed on the first and second semiconductor layers, respectively. PMOS晶体管和NMOS晶体管,可分别形成在第一半导体层上和第二半导体层上。
3
The gate electrodes (16) of the NMOS transistors (A) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium. NMOS晶体管(A)的门电极(16)在n-型掺杂的不含锗的多晶硅层(14)上形成。
4
Based on the SWB environment, the design for manufacturing and optimization of the nano-level NMOS integrated chips were implemented. 基于SWB环境实现了nm级NMOS集成化管芯的可制造性设计及优化。
5
Devices model including: NMOS FET, Resister, Capacitance, Inductor. Device model is analyzed deeply according to the RF Spice file of SMIC. 器件等效模型分析是根据SMIC的射频工艺库,对NMOS管、金属螺旋电感、电容、电阻进行了研究。
6
A depleted NMOS transistor, which was used as current source, and a negative feedback loop constitute a stable voltage reference. 该电路采用耗尽型NMOS管作电流源器件,结合负反馈,实现了稳定的电压基准。
7
A spectral data acquisition system is designed based on NMOS linear image sensor and micro controller unit (MCU) technology. 基于NMOS线性图像传感器和单片机(MCU)技术设计了一个光谱信号采集系统。
8
Design and Fabrication of a High-Voltage nMOS Device 高压nMOS器件的设计与研制
9
Performance Degradation of NMOS Device in Oxide Plasma Ambience 氧等离子气氛中NMOS器件的性能退化
10
Effects of Temperature and Dose Rates on Mobility of NMOS Devices 温度和剂量率对NMOS器件迁移率的影响