GaAs
- 网络砷化镓；砷化钾；砷化稼
GaAsGaAs
砷化镓
砷化镓（gaas）iii-v化合物电池的转换效率可达28%，gaas化合物材料具有十分理想的光学带隙以及较高的吸收效率，抗辐照能 …
砷化钾
有砷化钾（gaas），砷化铟（inas），锑化铟（insn），铝化镓（gaalas）等，输出波长大都在可见光的长波到近红外之间，医 …
砷化稼
如用砷化稼(GaAs)单晶作基体，从 以稼(Ga)为溶剂、砷(As)为溶质的饱和溶液中生长 GaAs外延层。其特点是设备简单，纯度 …
镓砷化物
霍尔发生器由一片薄传导材料制成，如镓砷化物(GaAs)，这种材料在使用期间能够实现可靠稳定的性能。在5 mA的控制电流下…
砷化镓单晶
1962年，天津制造出砷化镓单晶（GaAs），为研究制备其他 化合物半导体打下了基础。 1963-1964年，河北省半导体研究所 …
1
GaAs FET Oscillator stabilized by a dielectric resonator with a feedback loop has been developed.
本文介绍了一种环路反馈式场效应管介质稳频振荡器。
2
when the feed rate is larger, line speed on the surface have little effect on the roughness of GaAs films. 2.
当进给速度较大时提高线速度对单晶砷化镓片的表面粗糙度影响不大。
3
The design of the broadband GaAs PHEMT monolithic true-time delay was described.
简要介绍了实时延迟线电路的基本概念，对电路设计流程进行了阐述。
4
In this paper , a small Hall current sensor made from a GaAs Hall component is introduced.
介绍了一种利用砷化镓霍尔元件设计的微型霍尔电流传感器。
5
With the progress of the CMOS process, the CMOS RF process can compare with the traditional RF process like Bipolar, GaAs and so on.
随着CMOS工艺的不断进步，CMOS射频工艺和传统的射频工艺如双极型工艺、GaAs工艺等有了可比性。
6
GaAs grown at low temperature, 24 the slowly recovering component observed in the ?
增长材料温度低、24日慢慢恢复组件中观测到的？。
7
When the feed rate is small, the increased of cutting speed can significantly improve the surface roughness of GaAs chips;
当进给速度较小时，提高切割的线速度可以显著提高单晶砷化镓片的表面粗糙度；
8
Commercial GaAs epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible
市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。
9
GaAs semiconductor Generator rotator Temperature measuring system;
砷化镓半导体；发电机转子；测温系统；
10
gallium arsenide metal semiconductor field effect transistor(GaAs MESFET)
砷化镓金属化半导体场效应晶体管
11
Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers
GaAs基长波长量子点激光器增益和阈值电流密度的理论分析
12
Review and Prospect of Dryland Eco-Agriculture Research of Dingxi Experimental Station, GAAS, China
定西试验站旱农生态研究回顾与展望
13
Stoichiometry in SI-GaAs Bulk Materials by Triple Axis Mode X-Ray Diffraction Measurements
X射线三轴晶衍射法测量半绝缘GaAs单晶的化学配比
14
Progress on the material structure design of GaAs-based quantum cascade lasers
GaAs基量子级联激光器材料结构设计的进展
15
GAAS Generally Accepted Auditing Standard
通用审计标准
16
evidenced on GaAs-based compounds, 23 at a higher defect density the band structure is modified to
在这GaAs-based化合物、23在更高的缺陷密度能带结构中被修改
17
gallium arsenide (GaAs) injection laser
砷化镓注入雷射
18
Determination of Milligram As and Se in Drinking Water by GAAS
石墨炉原子吸收法快速测定饮用水中微量砷、硒
19
The measurement of thermally stimulated current in SI-GaAs
半绝缘砷化镓的热激电流谱测量
20
Analyses of Surface Damage in SI-GaAs Wafers
砷化镓晶片表面损伤层分析