PECVD
- 网络等离子增强化学气相沉积(plasma enhanced chemical vapour deposition)；等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition)；化学气相沉积设备
PECVDPECVD
等离子增强化学气相沉积(plasma enhanced chemical vapour deposition)
以等离子增强化学气相沉积(PECVD)形成薄膜光伏电池中最核心的非晶硅吸收层。 洁净明亮的无尘室是薄膜光伏电池生产基地 …
等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition)
在等离子体增强化学气相沉积(PECVD)系统中，利用逐层淀积非晶硅(a-Si)和等离子体氧化相结合的方法制备二氧化硅(SiO林若 …
化学气相沉积设备
台化学气相沉积设备（PECVD），同时另购置4台（进口）尾气处理设备。
化学气相沈积
电 浆辅助化学气相沈积（PECVD）系统使用电浆的辅助能量，使得沈积反应的温度得以降低。在PECVD中由於电浆的作用而 …
等离子体化学气相沉积
用等离子体化学气相沉积（PECVD）法，通过改变[SiH4∶N2] [NH3] 的流量比沉积SiN 薄膜．用椭圆偏.. 全部>> wang5945 热 …
化学气相沉积系统
增强型化学气相沉积系统(PECVD)，涉及领域包括，光伏器件物理、射频技术、真空技术、等离子体技术、电子技术、激光技 …
1
In this dissertation, we changed the PECVD technique parameters, and deposited amorphous, microcrystalline and polymorphous silicon films.
本论文通过改变PECVD工艺条件，制备了非晶、微晶和多形硅三种氢化硅薄膜。
2
This paper gives an overview of plasma enhanced chemical vapor deposition (PECVD) used in the solar industry.
本文针对电浆辅助化学气相沉积在太阳能产业上的应用作一概略性的介绍。
3
Amorphous silicon is deposited at low temperature with plasma-enhanced chemical vapor deposition (PECVD).
非晶硅是存放在低温等离子体增强化学气相沉积（等离子体增强化学气相沉积）。
4
First of all, plasma physics, PECVD equipment and its process principles are explained.
首先，对电浆物理、PECVD设备及制程原理加以阐述。
5
Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
6
Experimental study of breakdown characteristic of thin dielectric film in nanometre range formed by low temperature PECVD
PECVD法低温形成纳米级薄介质膜击穿特性的实验研究
7
Study of Microscopical Structure for the Dielectric Film in Nanometre Range Formed by Low Temperature PECVD
低温PECVD法形成纳米级介质膜微观结构研究
8
Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD
PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响
9
Preparation of Crystalline-Silicon Film by PECVD at Low-Temperature and Its Growth Kinetics
PECVD低温制备晶化硅薄膜及其机制浅析
10
Crystalline Control of Microcrystalline Silicon Thin Film Deposited by Low Temperature PECVD
PECVD法低温制备微晶硅薄膜的晶化控制
11
Study on microstructure and tribological properties of diamond-like carbon films deposited by PECVD
PECVD法制备类金刚石薄膜的结构和摩擦学性能研究
12
Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVD
PECVD法淀积氟碳掺杂的氧化硅薄膜表征
13
plasma enhanced chemical vapor deposition (PECVD)
等离子体增强化学汽相淀积
14
PECVD Nanostructure Tungsten Carbide Thin Films at Low Temperature
低温等离子体增强化学气相沉积纳米结构碳化钨薄膜
15
Study on Technology for the Silicon Nitride Thin Films Grown on Polyimide by PECVD
PECVD法在聚酰亚胺上沉积氮化硅薄膜的工艺研究
16
Plasma Enhance Chemical Vapor Deposition (PECVD)
电浆增强式化学气相沉积法
17
Study on Low Stress Silicon Nitride Deposited by PECVD with High Frequency
应用高频激励源制备低应力氮化硅薄膜研究
18
Physical Model of Interface Trap for Thin Film in Nanometre Range Formed by PECVD
PECVD形成纳米级薄膜界面陷阱的物理模型
19
Fault Diagnosis of PECVD Device Based on Bayesian Networks
基于贝叶斯网络的PECVD故障诊断技术
20
Micro-structure of PECVD Diamond Films by Slow Positron Beam
金刚石膜微结构的慢正电子束测量研究