czochralski
- 网络提拉法；直拉法；丘克拉斯基
czochralskiczochralski
提拉法
采用高温提拉法(Czochralski)生长出单晶，对晶体的生长气氛、退火工艺等进行研究。采用X射线荧光光谱法和电感耦合等离子 …
直拉法
通过直拉法（Czochralski法）或区熔法(Fz法)制出的单晶棒，经过切片、磨片、热处理、化学腐蚀、抛光等工艺制成的单面或 …
丘克拉斯基
提拉法，是1917年由丘克拉斯基(Czochralski)发明的一种合成晶体的方法，所以也称“丘克拉斯基法”，是一种从熔融状态的原料 …
直拉生长法
半导体圆片是从大块晶体上切割下来的，绝大多数晶体的主流生产技术是直拉生长法（Czochralski法）。这项工艺最早是由Tea…
提拉法也称丘克拉斯基
晶体提拉法也称丘克拉斯基(Czochralski)法，是一种直接熔化宝石原料，然后利用种晶从熔体中提拉出宝石晶体的方法。适用于 …
1
The CZ(Czochralski) technique is a process widely applied to monocrystal pulling with most output for semiconductor preparation.
直拉法是在半导体领域中应用最广，产量最大的单晶制备方法。
2
The single crystal silicon ingot is pulled from the source melt according to the Czochralski method.
根据直拉法，从熔化的源材料中提拉单晶硅锭。
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Investigation of Oxygen Precipitation Behavior in Nitrogen-doped Czochralski Silicon Used for Solar Cells
太阳电池用掺氮直拉单晶硅中氧沉淀行为的研究
4
Numerical Simulation on the Effect of Rotation in a Czochralski Silicon Crystal Growth with a Turbulence Model
紊流模型模拟分析旋转对提拉大直径单晶硅的影响
5
Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope
微氮直拉硅单晶中氧化诱生层错透射电镜研究
6
Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing
快速热处理工艺下直拉单晶硅中铜、镍对氧沉淀的影响
7
Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing
快速热处理对直拉硅单晶在模拟CMOS热处理工艺时氧沉淀的影响
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Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon
快中子辐照直拉硅中受主和施主的研究
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Modeling Requirements for Development of an Advanced Czochralski Control System
基于数学建模要求下先进的提拉法控制系统研制
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Numerical Simulation in Czochralski Crystal Growth by Deferred Correction QUICK Scheme
采用延时修正法实施QUICK格式模拟提拉单晶体的生长
11
Effects of temperature coefficient of surface tension on the silicon crystal Czochralski growth
表面张力温度系数对硅单晶生长的影响
12
The intrinsic gettering in neutron irradiation czochralski-silicon
中子辐照直拉硅中的本征吸除效应
13
Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer
直拉单晶硅中氧沉淀的高温消融和再生长
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Oxygen Precipitation and Induced Defects in Heavily Doped Czochralski Silicon
重掺杂直拉硅单晶氧沉淀及其诱生二次缺陷
15
Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon
锗对重掺硼直拉硅中氧沉淀的影响
16
Investigation of Copper Precipitation in As-Grown Czochralski Silicon
原生直拉单晶硅中的铜沉淀规律
17
Effects of Nitrogen on Grown-in Oxygen Precipitates in Large Diameter Czochralski Silicon
大直径直拉硅中氮对原生氧沉淀的影响
18
TEM investigation of oxygen precipitates in czochralski silicon
直拉硅中氧沉淀的TEM研究
19
Modeling of Czochralski Single Crystal Growth Process Using Neural Network
基于神经网络的提拉法钛单晶生长过程建模
20
Algorithm for Crystal-Profile Control for Czochralski Crystal Growth
直拉法晶体生长的晶体形状控制算法
21
Effects of Nitrogen on Oxygen Precipitation in Heavily Sb-Doped Czochralski Silicon
氮对重掺锑直拉硅中氧沉淀的影响
22
Magnetic field applied Czochralski crystal growth method
施加磁场切克劳斯基结晶成长法
23
Improvement of vacuum and air-charging systems for Czochralski crystal grower
直拉单晶炉真空系统和充气系统的改进
24
Growing Large Diameter Sapphire with Czochralski Method
提拉法生长大直径白宝石单晶
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Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon
单晶硅中过渡族金属镍对洁净区形成的影响
26
Effect of Nitrogen on Oxygen Precipitate Profile in Czochralski Silicon Wafer
氮对直拉硅片中氧沉淀分布的影响
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Application of Liquid Ring Vacuum Pump in Czochralski Crystal Grower
水环式真空泵在直拉单晶炉上的应用
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Flow Pattern Defects in Czochralski Silicon Crystals
直拉硅单晶中的流动图形缺陷
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Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices
液封直拉法砷化镓单晶及切割片
30
The potassium lithium niobate (KLN) crystal has been grown by Czochralski method;
用提拉法生长出铌酸锂钾（KLN）晶体；