dopant
美 ['doʊpənt]英 ['dəʊpənt]
- n.【物】掺杂剂
- 网络掺杂物；掺质；掺杂体
复数：dopants
dopantdopant
掺杂剂
进出口行业词汇英语翻译(D) ... dopan 多潘 dopant 掺杂剂 dopata 印度优质细布 ...
掺杂物
哪种材料适合作为某种半导体材料的掺杂物（dopant）需视两者的原子特性而定。一般而言，掺杂物依照其带给被掺杂材料的 …
掺质
他们将掺质(dopant)局限在粒径小于5 nm的ZnO纳米微晶中，经老化之后，再添加溶剂使量子点沉淀出来，并将少量的纳米团块 …
掺杂体
编辑本段掺杂体（Dopant）及地球图书馆 人类使用地球内存中的记忆注入自身而变身（Dopant）的样子。
搀杂剂
太阳能专业英语_百度知道 ... 电极 electrode 搀杂剂 dopant 泵 pump ...
多班特
从最近开始，风都的街上不断传出名为「多班特（Dopant）」的怪人作乱的怪异事件。所谓的「Dopant」实际上是人类使用「 …
掺入杂质气体
...200ohm-cm以上，通常在外延生长的同时还需要掺入杂质气体(dopant)来满足一定的器件电学性能。杂质气体可以分为N型和…
1
As circuits shrink, however, it's getting harder to put the atoms, particularly the dopant atoms, in exactly the right places.
然而，随着电路缩小，将原子、尤其是掺杂物的原子放到正确的地方越来越难。
2
After introducing dopant and defect into the graphene, the interaction between graphene and small molecules could be strengthened.
当在石墨烯表面引入掺杂剂和缺陷后，其与气体分子之间的相互作用被明显地增强。
3
These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.
这些n型搀杂浓度能使用中子嬗变搀杂（NTD）技术来取得。
4
Dopant interaction through the electric field, pairing, and emitting non-equilibrium point defects.
效应，掺杂剂通过电场、配对、和发射非平衡电缺陷交互作用
5
Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂-把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
6
The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer.
该方法也包括执行第二注入工艺以便在硅层中注入附加的第二类型掺杂剂。
7
Large size dopant could prolong the protection time of the coating.
采用大体积的掺杂离子能增加保护时间。
8
Municipality park resolute decision, tore down dopant house, make these bodies resided the heavy Huan sparkle of "baby" of "humble room" .
市园林处果断决定，拆除杂物房，让这些身居“陋室”的“宝贝”重焕光彩。
9
The invention discloses a method for preparing Ti-Si compound under microwave irradiation and dopant material thereof.
本发明公布了微波辐照制备钛硅化合物及其掺杂材料的方法。
10
The effects of borosilicate glass dopant on the electronic properties of ZnO varistors are investigated.
研究结果表明，硼硅玻璃料的掺入超过一定量时会使压敏电场上升。
11
Our work demonstrates that carbon is a novel dopant in the class of doped ZnO dilute magnetic semiconductor materials.
我们的工作证明了碳是一种新的属于氧化锌掺杂务半导体材料。
12
The additional implanted dopant has a second dopant profile in the silicon layer different than the first dopant profile.
附加的所注入的掺杂剂在硅层中具有与第一掺杂剂分布不同的第二掺杂剂分布。
13
Effect of borosilicate glass dopant on electrical characteristics of ZnO varistors.
硼硅玻璃掺杂对ZnO压敏电阻器电性能的影响。
14
Then we found then type dopant (Si), the p type dopant (Mg), and the defect N-vacancy related with admittance measurement.
而由导纳量测的结果发现，样品中含有来自于n型掺杂的矽（Si）、p型掺杂的镁（Mg）和一个可能与氮空缺（N-vacancy）有关的缺陷。
15
The spread uniformity of the dopant in the film surface will vary with the doping time.
又掺杂剂在膜表面分布均匀程度与掺杂时间有关。
16
Dopant- An element that contributes an electron or a hole to the conduction process, thus altering the conductivity.
搀杂剂-可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。
17
The dopant blocking superlattice may include a plurality of stacked groups of layers.
该掺杂剂阻挡超晶格可以包括多个层叠的层组。
18
In this thesis, ultrafast optical properties for thin film materials and telluride glasses with Er2O3 dopant are main topics.
本论文的主要工作是利用飞秒激光对薄膜材料和掺铒碲酸盐玻璃材料的光学特性进行研究。
19
The silicon carbon layer is exposed to a dopant.
将硅碳层暴露给掺杂物。
20
Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.
砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。
21
The implanted dopant has a first dopant profile in the silicon layer.
所注入的掺杂剂在硅层中具有第一掺杂剂分布。
22
The PAW and GGA method are used to study the electronic structure of KSrPO4 with the Eu dopant.
这里利用PAW与GGA方法，来研究钾锶磷酸盐在铕掺杂之下的电子结构。
23
providing a first doped region adjacent to one end of the gate structure, the first doped region having a first dopant concentration level;
邻近所说栅结构一端提供第一掺杂区，第一掺杂区具有第一掺杂剂浓度水平；
24
The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth;
含掺杂物离子的气体的流量根据外延生长期间的线性斜坡变化；
25
when there is only a metallic ion as dopant, sphere-shaped nanostructure polyaniline is easily formed;
仅有金属离子掺杂剂存在下，苯胺易于聚合成球形纳米结构的聚苯胺；
26
Influence of the Dopant Concentration on Its Microstructure and Properties of AZO Film
掺杂浓度对AZO薄膜结构和性能的影响
27
introducing dopant gas to the holes at high temperature to carrying out doping and diffusion on the walls of the holes;
在高温下向孔中通入掺杂气体对孔壁进行掺杂及扩散；
28
Researches on Dopant Concentration of a Thulium-Doped Silica Fiber
掺铥石英光纤的掺杂浓度实验研究
29
Transparent Conductive Oxide Doped Thin Films with High Valence Difference between Dopant and Ion Substituted
高价态差掺杂氧化物透明导电薄膜的研究
30
Secondary electron dopant contrast in semiconductors
半导体二次电子像中的掺杂衬度