epitaxy
美 ['epɪˌtæksɪ]英 ['epɪˌtæksɪ]
- n.【物】(晶体)取向附生
- 网络磊晶；外延；外延生长
epitaxyepitaxy
磊晶
何谓磊晶(epitaxy)? 帮我解释这名词.中文解释 有关半导体制程 发表你的评价 你的评价 马上按赞 加入 Yahoo! 奇摩 知识+ 粉丝 …
外延
外延（epitaxy）--中国百科网 ... 百度搜索:外延（ epitaxy） ...
外延生长
光电词汇港台地区译法(E) - 飞达光学网 ... epitaxial transistor 晶膜电晶体 epitaxy 取向附生，外延生长 epithermal 超热的 ...
取向附生
光电词汇港台地区译法(E) - 飞达光学网 ... epitaxial transistor 晶膜电晶体 epitaxy 取向附生，外延生长 epithermal 超热的 ...
取向生长
地质专业英语词汇(E-F) ... epistilbite 柱沸石 epitaxy 取向生长 epithelium 上皮 ...
磊晶成长
3.LED产业依其制造过程，大体上可分上游磊晶成长(Epitaxy)：主要厂商：晶元、新世纪、璨圆、华上、广镓、洲磊，中游晶粒 …
磊晶术
larry's blog ... 外延电晶体 epitaxial transistor 外延，磊晶术，晶膜术 epitaxy 摘要 epitome ...
分子束外延生长
① 人工晶体的分子束外延生长(Epitaxy)的物理化学过程及结晶生长机制。 ② 分子束外延人工晶体的物理特性，特别是超导特 …
1
Over-expanding connotation and ambiguous epitaxy are the main problems of Chinese medical history and literature science.
中医医史文献学科目前存在内涵过大，外延不明确；
2
The inventive method is advantageous in that it no longer comprises expensive epitaxy and insulation processes.
此方法的优点在于不再需要昂贵的外延和隔离过程。
3
Perovskite oxide th in films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale.
用激光分子束外延，原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。
4
Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community.
瑞博是一个制造分子束外延设备的公司，其设备在化合物半导体领域处于领先地位。
5
This thesis focuses on growth mechanism of SiC homogeneity epitaxy and electrical characterization methods of epilayer.
本文对同质外延碳化硅单晶材料的生长机理和外延生长层的表征方法进行了研究。
6
Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
外延沉积接着用以形成一外延层于该外延表面上。
7
Such pit-patterned Si substrates facilitate the formation of ordered GeSi quantum dot by deposition of Ge using molecular beam epitaxy(MBE).
由此制作的坑形图案衬底上用分子束外延系统生长锗硅量子点，可以实现对锗硅量子点成核位置的控制。
8
Single Crystal, Substrate, Optico-Electronics, Film, Epitaxy.
单晶，衬底，光电子，薄膜，外延。
9
The substrate is heated to vaporize the thin film and expose an epitaxy surface.
加热该基材以蒸发该薄膜且将外延表面裸露。
10
Electrochemical Atomic Layer Epitaxy and Research Progress of Its Application in Preparation of New Materials
电化学原子层外延及其新材料制备应用研究进展
11
Study of Optical and Electrical Properties of ZnO Thin Films Grown by Plasma-enhanced Molecular Beam Epitaxy
等离子体增强分子束外延生长ZnO薄膜及光电特性的研究
12
Study of Structural Effects of Defects in CdZnTe Substrate on HgCdTe Thin Film Grown by Liquid Phase Epitaxy
碲锌镉衬底缺陷对液相外延碲镉汞薄膜结构的影响
13
High performance gallium nitride based blue light emitting diode material epitaxy and dry etching fabrication technology
氮化镓基高亮度发光二极管材料外延和干法刻蚀技术
14
Calculation of the Lattice Mismatch Between Semiconductor Epitaxy and Substrate
半导体外延层晶格失配度的计算
15
Temperature-dependent absorption spectra investigation of shallow levels in HgCdTe grown by liquid phase epitaxy
变温吸收谱研究液相外延碲镉汞浅能级
16
Investigation of the orientation relationships and growth mechanism of GaN epitaxy on silicon
硅基GaN外延晶体学位相关系和生长机理研究
17
Molecular beam epitaxy and micro-structural characterizations for PbSe single crystal films
PbSe单晶薄膜的分子束外延及其表面微结构
18
Preparation of Bismuth Telluride Thin Film by Electrochemical Atomic Layer Epitaxy
电化学原子层外延法制备碲化铋薄膜
19
an aluminum nitride buffer layer is grown on the substrate by adopting a molecular beam epitaxy technology;
在衬底上采用分子束外延技术生长氮化铝缓冲层；
20
Design Technique for a High-Flux Ultrapure Hydrogen Purification System for Silicon Epitaxy
硅外延用大流量超纯氢气纯化系统的设计技术
21
Epitaxy and Characterization of Short Wavelength Resonant Cavity LEDs
短波长谐振腔发光二极管外延及性能研究
22
Substituting Epitaxy by Ion-implantation in the Production of Microphone Devices
改用离子注入替代外延生产话筒管
23
Fabricating Buffer Layer for Y-Based Coating Conductor by Surface Oxidation Epitaxy
表面氧化外延制备钇系涂层导体隔离层
24
Abnormal Raman spectra of PbTe crystalline thin films grown by molecular beam epitaxy
分子束外延PbTe单晶薄膜的反常拉曼光谱研究
25
Growth of Zinc Oxide Single Crystal Thin Films by Plasma-assisted Molecular Beam Epitaxy
用等离子体辅助分子束外延生长氧化锌单晶薄膜
26
Ptical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy
分子束外延生长ZnSe自组织量子点光、电行为研究
27
Growing GaN Film by Hydride Vapor Phase Epitaxy with Low Temperature AlN Interlayer
采用低温AlN插入层在氢化物气相外延中生长GaN膜
28
New Design of Temperature Control and Vacuum Systems for Liquid Phase Epitaxy
液相外延温控系统与真空系统的全新设计
29
Epitaxy of silicon on porous silicon by ultra vacuum electron beam evaporator
超高真空电子束蒸发在多孔硅上外延单晶硅
30
The Growth of Semiconductive Manganese Silicide by Ion Beam Epitaxy
离子束外延生长半导体性锰硅化合物