mosfet
- 网络场效应管；功率场效应管；功率场效应晶体管
mosfetmosfet
场效应管
场效应管原理及放大电路场效应管(MOSFET)是一种外形与普通晶体管相似，但控制特性不同的半导体器件。它的输入电阻可高 …
功率场效应管
功率场效应管(MOSFET)和射频管(RF)以及驱动电源模块(IC) 价格：面议 PHILIPS、TI、ST、MOTOROLA、FAIRCHILD、ON …
功率场效应晶体管
功率场效应晶体管(MOSFET)原理 原理 功率场效应晶体管 功率场效应管(Power MOSFET)也叫电力场效应晶体管,是一种单极型 …
金属氧化物半导体场效应管(Metal-Oxide-Semiconductor Field Effect Transistor)
为了改善金属氧化物半导体场效应管(MOSFET) 的短沟道效应(SCE)、 漏致势垒降低(DIBL) 效应, 提高电流的驱动能力, 提出了 …
金属氧化物场效应管
而金属氧化物场效应管(MOSFET)，甚至在几千兆赫兹的频 率上还能输出几瓦功率。 有关晶体管和场效应管的高频等效电路、 …
场效电晶体
而输出装置若为场效电晶体（MOSFET），则称之为漏极开路（英语：Open Drain，俗称「OD门」），工作原理相仿。透过O…
1
This can double or triple the current carrying capacity of the control, or produce a 20A control with a single MOSFET.
这可以双重或三重目前的载客量的控制，或出示一20A条控制与一个单一的MOSFET。
2
as such, a circuit designed with L-mosfet usually can work fine without a Vbe (or Vgs) multiplier for thermal compensation.
同样地，用L-mosfets设计的线路不用Vbe（或Vgs）倍增器作温度补偿可以工作得非常好。
3
From the late eighties to the early nineties, IGBT become a new composite device, which brings together the advantages of MOSFET and GTR.
IGBT作为八十年代末，九十年代初迅速发展起来的新型复合器件，它将MOSFET和GTR的优点集于一身。
4
In a hard switching mode the turning on of the MOSFET is not synchronized with the drain-source voltage value.
在硬开关里场效应晶体管的开启波形拐点并不和漏源极电压值同步。
5
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管（MOSFET）的作品在一个类似的原则，但二极管的MOSFET内掩埋。
6
This increase of the reflected voltage results in a higher drain-source voltage blocking MOSFET and longer duty cycles.
增加的反射电压导致使用更高漏源极击穿电压的场效应晶体管和更大的开关占空比。
7
Ultimate analysis magnetic elements' characteristic, transformer, inductance design and MOSFET switch component's shaping.
最后分析了磁性元件的特性，变压器，电感的设计和MOSFET开关器件的选型。
8
If the silicon bar is doped N, then the MOSFET is called an N-channel device.
如果掺硅栏N，则MOSFET被称为N沟道器件。
9
The Mosfet transistor has been very popular in this application as it fulfill both requirements better then the bipolar transistor.
MOSFET的晶体管一直很受欢迎，在此应用程序，因为它fullfils双方的要求，更好的话，双极型晶体管。
10
No external sense resistor is needed, and no blocking diode is required due to the internal MOSFET architecture.
由于采用了内部MOSFET架构，所以不需要外部检测电阻器和隔离二极管。
11
LED current sense pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current.
LED电流检测脚。在主开关电路MOSFET的ISNS及GND脚间接入一个电阻可以对LED的最大电流进行设定。
12
The system also includes a switch control circuit to switch the MOSFET switches in synchronization with the three-phase current flow.
本系统还包括开关控制电路，用于与三相电流同步切换MOSFET开关。
13
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
14
All semiconductor devices should be protected from static discharge, but MOSFETs are themost liable to build up a killing charge.
所有的半导体设备应该得到保护，免受静电放电，但MOSFET的themost负责建立一个杀费。
15
A gate pin controls a dual N-channel MOSFET to ensure only voltages within the OV and UV window are passed to the output.
栅极引脚控制一个双N沟道MOSFET，以确保仅在OV和UV窗口内的电压通过并至输出。
16
If reverse protection is not needed, only a single external MOSFET is required.
如果反向保护不需要，那么仅需要单个外部MOSFET。
17
Using MOSFET inverter technology, Simple circuit small size, light weight, high efficiency and energy saving.
采用MOSFET逆变技术，电路简易，体积小，重量轻，高效节能。
18
Single flyback converter circuit, as well as the PWM signal, is used to control the MOSFET.
使用单端反激变换器电路，用PWM信号控制开关管MOSFET。
19
We test the shot noise by this testing system for short-channel MOSFETs and the diodes testing, and the results are satisfying.
应用本测试系统测试短沟道MOSFET和二极管散粒噪声，得到了较好的测试结果。
20
Before soldering the centre lead of each MOSFET, bend it over towards the MOTOR- trace.
之前，该中心的焊锡铅每个MOSFET管，弯管，它超过对电动机得无影无踪。
21
The lead shorting devices protect the MOSFETs from charge buildup and the subsequent catastrophic discharge current.
牵头负责短路保护装置的建设和随后的灾难性放电电流的MOSFET。
22
Secondly, we analyzed the physical characteristic and noise characteristic of MOSFET, which is an important element of CMOS RFIC.
其次，对CMOS射频集成电路中的重要元素—MOSFET的物理特性、噪声特性进行分析；
23
The assembly of MOSFET is consisted of five main processes, which are wafer sawing, die attach, wire bond, molding, trim and form.
MOSFET的封装主要由晶圆切割，晶粒黏贴，焊线，封塑，切割成型这五大流程组成。
24
The multi-threshold field MOSFET is characterized by easily changing the threshold voltage.
该多阈值场MOSFET具有阈值电压易于实现变化的特点。
25
Using logic-level MOSFETs also allows the control to run on as few as four cells.
使用逻辑级别的MOSFET还允许控制上运行，只有4细胞。
26
MOSFETs with good body diode characteristics and ruggedness are needed in manyhigh voltage switching applications.
在许多高电压开关应用当中，都需要采用具有良好特性的体二极管且耐用性强的MOSFET。
27
Because it depends on some process characteristics, it is difficult to predict accurately the threshold voltage of a MOSFET.
因为它取决于一些工艺特点，很难准确预测阈值电压的场效应晶体管。
28
Allegro's A3901 offers a very small package size, low operating voltage and low voltage drop MOSFET outputs.
Allegro的A3901具有小巧精致的封装尺寸，低工作电压和低电压降MOSFET输出的特性。
29
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。
30
A novel current reference source based on subthreshold MOSFET's with high power supply rejection ratio(PSRR) is presented.
基于亚阈值MOSFET，提出了一种新颖的高电源抑制比（PSRR）电流基准源。