epitaxial
- 网络外延；磊晶；晶膜
epitaxialepitaxial
外延
IT专业英语词典-E ... enzyme 酶，酵素 epitaxial 外延 epitaxial diode 外延二极管 ...
磊晶
基本上，GaN LED 是以磊晶(Epitaxial) 方式生长在蓝宝石基板(Sapphire Substrate)上，由于磊晶GaN 与底部蓝宝石基板的晶格 …
晶膜
英语新词汇与常用词汇的翻译 - 外国语 -... ... epitasis 剧情发展 epitaxial 晶膜 epitaxy 取向附生 ...
外延的
光电词汇港台地区译法(E) - 飞达光学网 ... episcotister 频闪观测盘 epitaxial 取向附生的，外延的 epitaxial film 取向附生膜 ...
磊晶技术
磊晶技术 (Epitaxial) 蚀刻技术 (Etching) 光阻剂 (Photoresist) 显影 (Lithogtaphy) 制作 P 阱 (P-Well) 之步骤 1.
磊晶式
低成本宽带射频开关应用采用体效应 (Bulk) 和磊晶式 (Epitaxial) PIN 二极管的比较 in PDF (122 KB)硅芯片技术的演进带来了更 …
累晶技术
VLSI概论 谢永瑞 - 蔚蓝网|蔚蓝书店 ... ... 2. 1. 2 氧化技术 Oxidation 2. 1. 3 累晶技术 Epitaxial 2. 1. 4 蚀刻技术 Etching ...
1
The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well.
第一外延层被布置在衬底之上并且被掺杂为也具有第一导电类型。
2
Also the final texture of ISM processed Ni tape is stable after high temperature treatment, which can be used for epitaxial film growth.
进行的高温热退火实验证明获得的织构在一定的条件下是稳定的，可以用于外延薄膜的生长；
3
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed.
本发明提供一外延沉积工艺，其包含干式蚀刻工艺与后续的外延沉积工艺。
4
Such an enhancement could be attributed to the reduce dislocation density in the lateral growth regions of the epitaxial layers.
如此的改善可归因于在横向长磊晶层的区域缺陷密度减少造成的结果。
5
The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer.
光收集区域收集光生电荷载流子并被布置在第二外延层内。
6
The ALE-MBE technology was used to get better film quality and to control exactly the thickness of epitaxial layers for quantum dots growth.
以原子层-分子束方法磊晶（ALE-MBE）成长锑化镓，可成长出较高的薄膜品质，同时可准确的控制量子点的成长厚度。
7
The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type.
第二外延层被布置在收集器层上并且被掺杂为具有第一导电类型。
8
Experiments show that the epitaxial growth structure could be used in the preparation of APD devices.
测试结果表明，利用所采用的外延生长结构制备APD器件，具有可行性。
9
believed to result from a larger intrinsic defect density generated during the epitaxial growth.
据信是源于一个更大的内在缺陷密度磊晶成长过程中产生。
10
In this paper, experiment of homogeneous epitaxial , growing of single crystal diamond film by flame method in atmosphere was conducted.
采用大气下火焰法进行了金刚石单晶膜的同质外延实验。
11
Finally, several measurements for improving epitaxial growth technics are also put forward.
通过对外延生长过程的研究，提出了改进外延生长工艺的措施。
12
The measurements of XRD, SEM and XPS show that the as- grown BNN film is epitaxial single crystal with smooth surface.
X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。
13
Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
外延沉积接着用以形成一外延层于该外延表面上。
14
And a brief description of the development of epitaxial The number of shape Combination .
并简单描述数形结合发展的外延。
15
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜（15）或晶片的进一步的生长。
16
There is process capacity for semiconductor LED in Tongling. So there is the basis for producing epitaxial wafers and tube cores.
我市已具备组装加工半导体发光二极管能力，可以考虑在此基础上引进技术和设备进行外延片和管芯的生产。
17
There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.
在LED生产过程中，主要有外延片生长、芯片和封装三个环节。
18
A complication is that the films are strained and epitaxial, with hardly any defects.
一个复杂因素是薄膜为应变和单晶的，几乎没有任何缺陷。
19
The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings.
四探针法用在非常薄的样品，例如外延晶圆片和导电涂层上。
20
Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflection
硅抛光片和外延片表面质量光反射测试方法
21
Commercial GaAs epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible
市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。
22
The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth;
含掺杂物离子的气体的流量根据外延生长期间的线性斜坡变化；
23
The processing process comprises the following steps of: combining an epitaxial layer and a thick silicon substrate; scribing;
该制程包括下列步骤：外延层与厚硅衬底结合的步骤；
24
Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
无机半导体材料的检验。用红外线干涉法测量硅外延生长层的的厚度
25
Study of transition metal silicides thin film epitaxial growth on silicon substrate
硅基底上外延生长过渡金属硅化物薄膜的研究
26
Testing of materials for semiconductor technology - Determination of defect types and defect densities of silicon epitaxial layers
半导体工艺材料的检验.硅晶体外延层中缺陷种类和缺陷密度测定
27
Analysis of the Structure and Optical Properties of Epitaxial ZnO Films at Different Substrate Temperatures
不同衬底温度下ZnO外延薄膜的结构及光学特性分析
28
Algebraic Multigrid Method for a Multiscale Elastic Model of Thin Epitaxial Films
求解外延膜多尺度应变模型的代数多重网格法
29
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
30
Laser-enhanced epitaxial growth of semiconductor heterostructure
激光增进的半导体异质结外延生长