photoresist
美 [ˌfoʊtoʊrɪ'zɪst]英 [fəʊtəʊrɪ'zɪst]
- n.【物】光致抗蚀剂
- 网络光阻；光刻胶；光阻剂
photoresistphotoresist
光阻
1.光阻(photoresist) 2.光罩(mask) 3.对准机(mask aligner)4.曝光光源(exposure source) 5.显像溶液(develope solution) 6.烤箱(he…
光刻胶
光刻胶(photoresist)又称光致抗蚀剂，即通过紫外光、电子束、离子束、X射 线等的照射或辐射，使其溶解度发生变化的耐蚀刻 …
光阻剂
光阻剂(photoresist)是电子产业的重要发明，可用於光蚀刻技术(photolithography)，生产积体电路版(Integrated Circuits，即俗 …
光致抗蚀剂
POLYMER - 瑞的日志 - 网易博客 ... 防蚀剂 anti-corrosion agent 光致抗蚀剂 photoresist 防霉剂 antiseptic ...
光阻液
光阻液 (Photoresist)特殊气体监测设备 (GDS) ALD/CVD原物料 LED/太阳能电池(集光型)相关材料 抗反射膜 (AR Film) 研磨片 (P…
光阻蚀剂
飞达光学网 光电词汇港台地区译法(P) ... photorepeater 复印机 photoresist 光阻蚀剂 photoresist optics exposure 光电导曝光 ...
光阻材料
随着晶体管的临界尺寸越来越小，在芯片光阻材料 (photoresist) 暴露的区域上聚光也越来越难。目前的氩氟 (ArFl) 光刻工具可 …
1
When using the sputtering nickel system, photoresist and nickel Crosslinking became extremely easy-to-be strong enough to produce water.
在搁置溅射镀镍的编制洋，平刻胶与镍交联后变得格外坚硬，极易爆发水纹。
2
Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.
在紫外光照射穿透的地方，光刻胶的化学特性会被削弱，使硅晶片表面留下图案。
3
Here are a few solutions: firstly, plasma kinetic dedust, in a high vacuum conditions, oxygen ions and photoresist or chemical reaction.
这边有几个处置方案：第一，等离子不兴尘法，在一个矮真空境况下，氧离子与平刻胶或化学精神反响。
4
A small undesired hole in an oxide, opaque region of a mask or reticle, or in a photoresist layer.
氧化物、掩模或标线的不透明区域，或光刻层中不需要的小孔。
5
Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages.
同现有的牺牲层材料相比，光致抗蚀剂作牺牲层材料具有一些优越性。
6
Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.
本发明的涂料组合物可用作光致抗蚀剂的覆盖涂层，包括可用在浸渍平版印刷工艺中。
7
Otherwise, using photoresist as sacrificial layers does not restrict the thickness of structures and the choice of materials.
此外，用光致抗蚀剂作牺牲材料不影响结构的厚度和材料的选择。
8
A new method with a one wavelength laser for making 3D diffusion objects true color rainbow hologram on the photoresist plate is presented.
提出了一种用单波长激光制作真彩色彩虹全息图的新方法。
9
aqueous solution as the developer the photoresist can be of negative tone.
用氢氧化钠-乙醇水溶液显影可以得到负性光刻图形；
10
The defining steps of photoresist layer includes exposure and development and the lugs may be joined through stoving to melt.
限定光致抗蚀剂层的步骤还包括曝光、显影。并可利用烘烤步骤使各凸块溶融化，以接合各凸块。
11
The invention provides a photosensitive compound having low edge roughness (LER) photoresist pattern.
本发明提供了能形成具有低LER（线边缘粗糙度）的光刻胶图案的感光化合物。
12
In microelectronics, the process of removing material, on a chip , left exposed by the exposure and development of the photoresist.
在微电子技术中，通过曝光并显影光刻胶除去芯片上的物质露出剩馀部分的工艺。
13
The said method can obtain certain painting homogeneity and relatively high photoresist utilization.
本发明的方法可在保证一定涂覆均匀度的同时，获得较高的光阻使用率。
14
Positive Photoresist is rubber particles upward, the same height and diameter of the rubber.
正胶就是胶皮颗粒向上、高度与直径相等的胶皮。
15
In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.
另外，本文还利用时域有限差分法分析了光刻胶层内部的光场分布。
16
As photoresist has the exposal characteristics, two-spectrum method is fit for measuring the thickness of photoresist.
针对光刻胶有曝光的特性，双光谱法更适合于胶厚检测。
17
Using AZ4620 photoresist throw at plane glass, the measuring thickness of photoresist is benchmark through ellipsometer.
采用AZ4620正型光刻胶甩胶于平面玻璃基片，以椭偏仪测量的结果为基准。
18
A photoresist pattern can be formed on the dielectric.
在该电介质上形成光致抗蚀剂图案；
19
This paper introduces a technical method of etching optical dividing disc with 302~# negative type photoresist .
本文介绍了采用302负性光刻胶刻制光学度盘的工艺方法。
20
Study on Process of Water-soluble Printing Photoresist.
水性印花感光制版材料的研究。
21
R. 177 so that it can be used for modulation the photoresist.
177进行分散及稳定处理，使其能够适用于光阻剂的调制。
22
A novel pressure sensor based on a high-aspect-ratio structure formed by SU-8 photoresist is proposed.
主要提出了一种利用SU-8光刻胶形成高深宽比结构的新型压力传感器。
23
Preparation of Antifoaming Agent Used for Developing Semi-Aqueous Dry Film Photoresist
印制线路板显影液用消泡剂的研制
24
Stripping of Photoresist by an Atmospheric Pressure Radio-Frequency Plasma
常压射频低温冷等离子体清洗光刻胶研究
25
stripping photoresist to obtain the electrode diagram of a diagrammatic all-organic field-effect transistor device;
剥离光刻胶后得到图形化了的全有机场效应晶体管器件的电极图；
26
Acid Proliferation Generator and Its Application in Chemically Amplified Photoresist
酸增殖源及其在化学增幅抗蚀剂体系中的应用
27
stripping off photoresist with acetone to carry out imaging to a bottom electrode;
用丙酮剥离掉光刻胶对底电极进行图形化；
28
Calculating the Contrast and Threshold Sensitivity of a Positive Photoresist
计算正性光致抗蚀剂的对比度和阈限灵敏度
29
forming a hard mask layer and a patterned photoresist layer on the semiconductor substrate;
图案化该光致抗蚀剂层以形成一第一开口；
30
determining effective adhesion of photoresist to hard - surface photomask blanks and semiconductor wafers during etching
测定在蚀刻期间光致抗蚀剂同硬表面光掩膜坯及半导体片的有效粘附性